kSA Emissometer

kSA Emissometer Ex Situ Wafer Carrier Characterisation.

Key features

  • Measures:
  • - Diffuse Reflectance
  • - Specular Reflectance
  • - Emissivity
  • - Pocket Depth
  • - Photoluminescence (optional)
Designed to quickly and easily generate high-resolution reflectance, emissivity and pocket-depth maps of wafer carriers. Wafer carrier emissivity variation can mean temperature non-uniformity, which can lead to reduced device yield and possibly complete growth run failure. With the kSA Emissometer, emissivity changes can be tracked to determine carrier end-of-life without wasting growth runs. The kSA Emissometer also detects residual deposits after baking, and identifies carrier surface defects, scratches, microcracks and pits.
Applications
  • Wafer carrier emissivity and texture uniformity
  • Quantitative temperature set-point correction, due to change in wafer carrier emissivity
  • Detection of residual material deposits
  • Identification of changes in pocket depth and profiles
  • Carrier end-of-life determination
Interesting Application note 1 here. Interesting Application note 2 here. Watch an interesting video Emissometer Highlights for MOCVD Wafer Carrier Characterization

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