The EFM 3 is designed for epitaxial thin film growth from sub-monolayer to complex multilayer systems, with evaporation rates varying from 1/10 monolayer per minute to several monolayers per second.
The precisely defined evaporant beam profile allows highly uniform deposition on the sample. The deposition area is determined by the choice of three different easily exchangeable exit apertures and the distance from the source to the sample. Integrated into each EFM 3 is a z-shift for material feed when using rods or simply to optimize the distance between the electron beam filament and material to be evaporated either from a rod or crucible.
- Fully bakeable up to 250°C
- Evaporation area 4-20 mm
- Evaporation from rods and crucibles
- Z-shift for material feed
- Integrated shutter and Flux Monitor
- Crucible capacity up to about 700 mm3
- Mounting flange: NW35CF
The integrated flux-monitor and the shutter allow for a precise reproducibility of previous evaporation rates before the sample is exposed to the evaporant (even with shutter closed). In combination with the EVC 300/300s power supplies, the flux monitor signal can be used to fully control the evaporation process by flux regulation.
Every EFM evaporator has a wide range of crucible options and can be upgraded with automation and recipe control features via MultiEpitass control suite, enabling growth of complex multilayers and synchronisation of multiple EFMs into the same growth process.