The EFM 3i is specifically designed to facilitate layer-by-layer growth in cases where it does not occur naturally. It allows for the controlled evaporation of the target material and the simultaneous generation of ions to create additional surface defects (Ion-Beam- Assisted Deposition (IBAD)).
The ions can be produced either directly through the process of evaporation, or from injected inert gas via an integrated gas inlet. An electrostatic lens is used to both focus the ions on the substrate and adjust the ratio of ions-neutrals within the deposition area at the substrate surface to modify the defect density. The electrostatic lens may also be used to repel ions created during evaporation to create a 100% neutral beam with the same characteristics as the EFM3s.
- Evaporation area ø 4-20 mm
- Ion focusing lens for Ion-Beam-Assisted Deposition ( IBAD )
- Ion suppression
- Gas inlet for additional rare gas ions
- Integrated shutter and Flux Monitor
- Crucible capacity up to about 300 mm3
- Mounting flange: NW35CF
All other features same as EFM 3
The dedicated EVC 300i power supply supports not only the evaporation process but also supplies the additional lens voltage and includes a sample current meter.
Please Note: Due to the special design of the ionization region, the max. crucible size is smaller than the standard EFM 3
, but comparable to many alternative standard mini-ebeam evaporators.