IG2 Sputter Ion Source Package
2 kV source and controller - low cost solution for beam etching and sputter cleaning
The Model 04-165 Backfill Ion Source generates an energetic inert gas ion beam for
sputter-etching solid surfaces. The source requires a static pressure of 5x10-5 torr
with an inert gas such as argon. Ions are generated by electron impact within the ion
source’s dual filament ionization chamber and are then focused at the target with
energies of up to 2 kV. The impurity content of the ion beam is minimized by using
an off-axis filament geometry. A focusing lens permits high ion current density to
be obtained for a given operating pressure and source-to-sample distance. A dual
tungsten filament assembly permits continued operation when the first filament
- Low cost cleaning source
- 500eV to 2KeV (500 eV steps)
- Dual Filament for long term operation
- 25-50mm working distance
- In field replacement of filament
- Mounting Flange: DN40CF / 2.75“
The Model 32-175 2 kV Ion Source Control provides all the necessary voltages and
currents required to operate the Model 04-165 2 kV Backfill Ion Source. The beam
voltage may be activated manually or remotely. The built-in emission current meter
makes it easy to set the appropriate filament current.
Download Application notes here: Application Note 1
, Application Note 2.
The IG2 is developed by RBD Instruments.